The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Nov. 21, 2022
Applicant:
Corning Incorporated, Corning, NY (US);
Inventors:
Robert George Manley, Ocala, FL (US);
Nikolay Zhelev Zhelev, Evanston, IL (US);
Bin Zhu, Ithaca, NY (US);
Assignee:
CORNING INCORPORATED, Corning, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 86/01 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01);
U.S. Cl.
CPC ...
H10D 86/0223 (2025.01); H10D 30/0314 (2025.01); H10D 30/0321 (2025.01); H10D 30/6715 (2025.01); H10D 30/6731 (2025.01); H10D 30/6745 (2025.01); H10D 86/411 (2025.01); H10D 86/421 (2025.01); H10D 86/441 (2025.01); H10D 86/60 (2025.01);
Abstract
A method for making a thin film transistor device includes forming a semiconductor film on a flexible substrate comprising a thin ribbon of refractory material that does not degrade when heated to temperatures greater than about 750° C. The semiconductor film is crystallized by heating the semiconductor film and the flexible substrate to at least about 750° C. A dielectric material is deposited on the crystallized semiconductor film. Gate, source, and drain electrodes are formed on the dielectric material.