The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Dec. 20, 2022
Fuji Electric Co., Ltd., Kawasaki, JP;
Yosuke Sakurai, Azumino, JP;
Akio Yamano, Matsumoto, JP;
Seiji Noguchi, Matsumoto, JP;
Ryutaro Hamasaki, Matsumoto, JP;
Takuya Yamada, Matsumoto, JP;
Daisuke Ozaki, Okaya, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
Provided is a semiconductor device in which one mesa portion of two mesa portions in contact with a gate trench portion is an active mesa portion in which an emitter region of a first conductivity type having a doping concentration higher than that of a drift region is arranged in contact with the gate trench portion, the other mesa portion of two mesa portions in contact with the gate trench portion is a dummy mesa portion having no emitter region, and a dummy contact resistance which is a resistance of the dummy mesa portion and an emitter electrode is 1000 times or more as high as an active contact resistance which is a resistance of the active mesa portion and the emitter electrode.