The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Aug. 23, 2021
Rutgers, the State University of New Jersey, New Brunswick, NJ (US);
Yicheng Lu, East Brunswick, NJ (US);
Fangzhou Yu, Piscataway, NJ (US);
Wen-Chiang Hong, Tigard, OR (US);
RUTGERS, THE STATE UNIVERSITY OF NEW JERSEY, New Brunswick, NJ (US);
Abstract
A multifunctional oxide based negative capacitance thin film transistor (NC-TFT) is built on glass or on flexible substrates, instead of on the single crystal substrates. It is therefore suitable for low-cost and large-area electronics, transparent electronics, or flexible electronics applications. The NC-TFT includes a semiconductor Magnesium Zinc Oxide (MZO) as the channel layer and a Nickel doped MZO ferroelectric material (NMZO) as the gate dielectric layer. Also disclosed are articles of manufacture methods of building the NC-TFT on glass and its transparent version NC-TTFT on glass.