The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Mar. 11, 2022
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Alim Karmous, Dresden, DE;
Olaf Storbeck, Dresden, DE;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01); H10D 62/83 (2025.01); H10D 64/62 (2025.01);
U.S. Cl.
CPC ...
H10D 64/01 (2025.01); H01L 21/0217 (2013.01); H01L 21/02247 (2013.01); H01L 21/0228 (2013.01); H10D 64/231 (2025.01); H10D 64/252 (2025.01); H10D 62/83 (2025.01); H10D 64/62 (2025.01);
Abstract
A method of forming a semiconductor device is proposed. The method includes providing a semiconductor structure. The method further includes forming an auxiliary layer directly on a part of the semiconductor structure. Silicon and nitrogen are main components of the auxiliary layer. The method further includes forming a conductive material on the auxiliary layer. The conductive material incudes AlSiCu, AlSi or tungsten, and is electrically connected to the part of the semiconductor structure via the auxiliary layer.