The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Nov. 25, 2022
South China University of Technology, Guangdong, CN;
Miao Xu, Guangdong, CN;
Hua Xu, Guangdong, CN;
Min Li, Guangdong, CN;
Junbiao Peng, Guangdong, CN;
Lei Wang, Guangdong, CN;
Jian Hua Zou, Guangdong, CN;
Hong Tao, Guangdong, CN;
South China University of Technology, Guangzhou, CN;
Abstract
Disclosed in the present invention is a rare-earth doped semiconductor material. Compounds of two rare-earth elements R and R' having different functions are introduced into an indium oxide containing material. The coupling of R element ions to an O2p orbit can effectively enhance the transfer efficiency of the rare-earth R′ as a photogenerated electron transfer center, such that the light stability of a device with a small amount of R′ doping can be achieved. Compared with single rare-earth element R′ doping, due to less doping, the impact on a mobility is less, such that higher mobility and light stability devices can be obtained. Further provided in the present invention is a semiconductor-based thin-film transistor, and an application.