The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Jul. 11, 2022
Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Hubei, CN;
Hui Zheng, Hubei, CN;
Wenxu Xianyu, Hubei, CN;
Abstract
The present disclosure provides a thin film transistor and a method of manufacturing the same, wherein the thin film transistor at least comprises a first gate electrode, a first insulating layer, an active layer, a source electrode and a drain electrode, a second insulating layer covering the active layer, the source electrode and the drain electrode, and a second gate electrode, wherein the active layer comprises a first active layer, a second active layer on the first active layer, and a third active layer on the second active layer; wherein the first active layer, the second active layer, and the third active layer may form a heterostructure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile