The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Oct. 24, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hakchul Jung, Seoul, KR;
Garoom Kim, Suwon-si, KR;
Ingyum Kim, Bucheon-si, KR;
Jiyun Han, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor device includes a substrate including a first device region and a second device region, a first active pattern on the first device region, a second active pattern, which has a width smaller than the first active pattern, on the second device region, a first channel pattern on the first active pattern, a first source/drain pattern connected to the first channel pattern, a second channel pattern on the second active pattern, a second source/drain pattern connected to the second channel pattern, and a gate electrode that extends from the first channel pattern to the second channel pattern in a first direction. The first channel pattern includes a plurality of semiconductor patterns, which are vertically stacked and spaced apart from each other. The second channel pattern protrudes vertically from the second active pattern.