The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Jun. 29, 2023
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jaepil Lee, Suwon-si, KR;
Junbae Kim, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01F 17/00 (2006.01); H01L 23/522 (2006.01); H10D 1/20 (2025.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H10B 12/482 (2023.02); H01F 17/0013 (2013.01); H01L 23/5227 (2013.01); H10B 12/315 (2023.02); H10B 12/34 (2023.02); H10B 12/50 (2023.02); H10D 1/20 (2025.01); H10D 1/716 (2025.01); H01F 2017/0073 (2013.01);
Abstract
A semiconductor device includes a lower structure, a data storage structure on the lower structure, and an inductor structure on the lower structure, where the data storage structure includes first electrodes extending in a vertical direction perpendicular to an upper surface of the lower structure, a second electrode provided on the first electrodes, and a dielectric layer between the first electrodes and the second electrode, and where the inductor structure includes an inductor conductive pattern at a level that is substantially the same as a level of the first electrodes.