The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Mar. 07, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kijoon Kim, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device is provided. The semiconductor device includes: a lower structure including bit lines; an intermediate structure including vertical channel structures and gate structures; and an upper structure including a data storage structure. A first channel structure among the vertical channel structures includes a lower portion, and first and second vertical portions extending upwardly from sides of the lower portion. The gate structures include first and second gate structures on the lower portion between the first vertical portion and the second vertical portion. The first gate structure is in contact with the first vertical portion. The second gate structure is in contact with the second vertical portion. The first channel structure includes a plurality of layers. At least one of the plurality of layers is an oxide semiconductor layer or a two-dimensional (2D) material layer having an energy band gap of about 1.2 eV or greater.