The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

May. 03, 2023
Applicant:

Unisantis Electronics Singapore Pte. Ltd., Singapore, SG;

Inventor:

Nozomu Harada, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/20 (2023.02); H10B 12/01 (2023.02);
Abstract

On P layer bases extending in a band shape in a first direction in plan view, Nlayers also extending in a band shape in the first direction and Si pillars are formed. Subsequently, a gate insulating layer and gate conductor layers are formed so as to surround the Si pillars. Subsequently, contact holes whose bottom portions are in contact with the Nlayers are formed in an insulating layer, and first conductor W layers are formed at the bottom portions of the contact holes. Subsequently, insulating layers each having a hole are formed in the contact holes. Subsequently, a second conductor W layer is formed in a second direction perpendicular to the first direction so as to be connected to the gate conductor layers.


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