The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
May. 26, 2023
SK Hynix Inc., Gyeonggi-do, KR;
Seung Hwan Kim, Gyeonggi-do, KR;
Kang Sik Choi, Gyeonggi-do, KR;
SK hynix Inc., Gyeonggi-do, KR;
Abstract
A method for fabricating a semiconductor device includes: forming a semiconductor layer pattern over a lower structure; forming a gate dielectric layer to cover surfaces of the semiconductor layer pattern; forming a conductive layer over the gate dielectric layer to surround the semiconductor layer pattern, the conductive layer including a first edge portion and a second edge portion that are facing each other; and forming a pair of horizontal conductive lines vertically overlapping the semiconductor pattern by horizontally recessing the first edge portion and the second edge portion of the conductive layer.