The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Nov. 01, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Mitsunari Sukekawa, Hiroshima, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); G11C 11/402 (2006.01);
U.S. Cl.
CPC ...
H10B 12/03 (2023.02); G11C 11/4023 (2013.01); H10B 12/05 (2023.02); H10B 12/48 (2023.02);
Abstract
A semiconductor memory device including an access transistor configured as a vertical transistor comprises a channel portion and a pair of source/drain regions; a storage capacitor connected to one of the pair of source/drain regions; a bit line connected to the other of the pair of source/drain regions, a first semiconductor layer provided in the source/drain region to which the bit line is connected. Preferably, the first semiconductor layer comprises SiGe.
Sukekawa, Mitsunari. (2026). Semiconductor memory device and method of forming the same (U.S. Patent No. 12520475). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12520475
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile