The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Sep. 18, 2024
Applicant:
Will Semiconductor (Shanghai) Co. Ltd., Shanghai, JP;
Inventor:
Manabu Ishida, Miyagi, JP;
Assignee:
WILL SEMICONDUCTOR (SHANGHAI) CO., LTD., Shanghai, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/04 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H03K 17/6872 (2013.01);
Abstract
The disclosure includes a p-channel output transistor MP, of which the drain is connected to the output end; a gate drive circuit A, which drives the gate voltage of the output transistor; and an n-channel pull-up transistor NAT, which is connected to the gate of the output transistor MP, and is turned on when the output transistor is OFF to pull up the gate voltage. The output transistor MPis of an enhanced type with a relatively high threshold voltage for being turned on, and the pull-up transistor NAT is of a native type with a relatively low threshold voltage for being turned on.