The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Apr. 26, 2024
Qualcomm Incorporated, San Diego, CA (US);
Lei Sun, San Diego, CA (US);
QUALCOMM INCORPORATED, San Diego, CA (US);
Abstract
A boost circuit includes a first p-type field effect transistor (PFET), a second PFET, a first capacitor, and a second capacitor. A drain of the first PFET and a drain of the second PFET are coupled to a supply rail in a first voltage domain, a gate of the first PFET is coupled to a source of the second PFET, and a gate of the second PFET is coupled to a source of the first PFET. A first terminal of the first capacitor is coupled to the source of the first PFET and a first terminal of the second capacitor is coupled to the source of the second PFET. A second terminal of the first capacitor and a second terminal of the second capacitor are driven by a first control signal and a second control signal, respectively, in a second voltage domain.