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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12518943 B1

PDFFull Text
Date of Patent:
Jan. 06, 2026

Filed:

May. 19, 2021

Ion source baffle, ion etching machine, and usage method therefor

Applicant:

Jiangsu Leuven Instruments Co. Ltd, Xuzhou, CN;

Inventors:

Yaoyao Zhang, Xuzhou, CN;

Dongdong Hu, Xuzhou, CN;

Haiyang Liu, Xuzhou, CN;

Jun Zhang, Xuzhou, CN;

Na Li, Xuzhou, CN;

Shiran Cheng, Xuzhou, CN;

Zhiyou Zhu, Xuzhou, CN;

Kaidong Xu, Xuzhou, CN;

Assignee:

JIANGSU LEUVEN INSTRUMENTS CO. LTD, Xuzhou, CN;

Attorney:

HAUPTMAN HAM, LLP

Primary Examiner:

David E Smith

Assistant Examiner:

Laura Eloise Tandy

Int. Cl.
CPC ...
H01J 37/08 (2006.01); H01J 37/305 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/08 (2013.01); H01J 37/3053 (2013.01); H01J 37/32357 (2013.01); H01J 37/32633 (2013.01); H01J 2237/3341 (2013.01);
Abstract

An ion source baffle includes a baffle body, wherein the baffle body is of a hollow structure; baffles are symmetrically fixedly arranged on an inner wall of the baffle body; the baffles extend towards the center of the baffle body; and in the direction from the inner wall of the baffle body towards the center of the baffle body, a shielding area formed by the baffles is reduced. The ion etching machine includes a discharge chamber, a reaction chamber and an ion source baffle, wherein the ion source baffle is clamped on an inner wall of the discharge chamber; and plasma sequentially passes through the ion source baffle and an ion source grid assembly. In the ion etching machine, the ion source baffle is additionally provided, such that after plasma is shielded by the ion source baffle.

Find Patent Forward Citations

Zhang, Yaoyao. (2026). Ion source baffle, ion etching machine, and usage method therefor (U.S. Patent No. 12518943). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12518943

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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