The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

May. 26, 2021
Applicant:

The George Washington University, Washington, DC (US);

Inventors:

Mario Miscuglio, Arlington, VA (US);

Volker J. Sorger, Alexandria, VA (US);

Assignee:

The George Washington University, Washington, DC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/04 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/046 (2013.01); G11C 13/0069 (2013.01); G11C 2013/008 (2013.01);
Abstract

Multistate non-volatile photonic memory devices are disclosed. The photonic devices comprise phase change materials with broadband transparencies used to store discretized information with negligible losses in the 0 state. The photonic memories comprise multiple configurations for reading and writing multi-bit words. The reading mechanisms comprises schemes based on light-absorption (FIG.), shift in resonances of a cavity (ring resonator, photonic crystal; FIG.) or interferometric schemes (FIG.). The photonic memory devices employ multiple techniques for writing electrically (FIG.and related performance) and/or all-optically (FIGS.-). The optical writing can be performed with pulsed laser light coming either from free space or on-chip using dedicated writing lines and opportune drops.


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