The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Aug. 20, 2021
Applicant:

Element Six Technologies Limited, Didcot, GB;

Inventors:

Rizwan Khan, Maidenhead, GB;

Steven Coe, Didcot, GB;

Jonathan Wilman, Didcot, GB;

Daniel Twitchen, Didcot, GB;

Geoffrey Scarsbrook, Didcot, GB;

John Brandon, Didcot, GB;

Christopher Wort, Didcot, GB;

Matthew Markham, Didcot, GB;

Ian Friel, Didcot, GB;

Katharine Robertson, Didcot, GB;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/10 (2006.01); C01B 32/25 (2017.01); C23C 16/27 (2006.01); C23C 16/511 (2006.01); C23C 16/52 (2006.01); C30B 29/04 (2006.01);
U.S. Cl.
CPC ...
C30B 25/105 (2013.01); C01B 32/25 (2017.08); C23C 16/274 (2013.01); C23C 16/511 (2013.01); C23C 16/52 (2013.01); C30B 29/04 (2013.01);
Abstract

A method of fabricating synthetic diamond material using a microwave plasma activated chemical vapour deposition technique is provided which utilizes high and uniform microwave power densities applied over large areas and for extended periods of time. Products fabricated using such a synthesis technique are described including a single crystal CVD diamond layer which has a large area and a low nitrogen concentration, and a high purity, fast growth rate single crystal CVD diamond material.


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