The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Dec. 09, 2022
Applicant:

Safran Ceramics, Le Haillan, FR;

Inventors:

Stéphane Roger André Goujard, Moissy Cramayel, FR;

Guillaume Jean-Nicolas Laduye, Saclay, FR;

Benjamin Cossou, Moissy Cramayel, FR;

Assignee:

SAFRAN CERAMICS, Le Haillan, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/571 (2006.01); C04B 35/628 (2006.01); C04B 35/80 (2006.01);
U.S. Cl.
CPC ...
C04B 35/571 (2013.01); C04B 35/62868 (2013.01); C04B 35/62884 (2013.01); C04B 35/80 (2013.01); C04B 2235/428 (2013.01); C04B 2235/5244 (2013.01); C04B 2235/5252 (2013.01); C04B 2235/614 (2013.01);
Abstract

A method for manufacturing a part of SiC/SiC composite material includes the production of a fibrous preform from silicon carbide fibers; the deposition of an interphase on the fibers of the fibrous preform; a first densification including the formation of a first matrix phase by chemical vapor infiltration with a first matrix precursor including methyltrichlorosilane (MTS); a second densification including the formation of a second matrix phase by chemical vapor infiltration with a second SiC precursor different from the first precursor, the second precursor forming an SiC deposit comprising residual hydrogen and free silicon; and a third densification including the impregnation of the fibrous preform with an impregnation composition containing at least silicon so as to obtain a part made of SiC/SiC composite material.


Find Patent Forward Citations

Loading…