The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Mar. 08, 2024
Kioxia Corporation, Tokyo, JP;
SK Hynix Inc., Icheon-si, KR;
Hyung-Woo Ahn, Seongnam-si, KR;
Tadaaki Oikawa, Seoul, KR;
Taiga Isoda, Tokyo, JP;
Kenji Fukuda, Seoul, KR;
Ku Youl Jung, Icheon-si, KR;
Kioxia Corporation, Tokyo, JP;
SK hynix Inc., Gyeonggi-Do, KR;
Abstract
According to one embodiment, a magnetic memory device includes a memory cell. The memory cell includes a switching element, a magnetoresistance effect element, and an electrode that electrically couples the switching element to the magnetoresistance effect element. The electrode includes: a first non-magnetic layer being in contact with the switching element; and a second non-magnetic layer provided on a side opposite to a side on which the switching element is provided with respect to the first non-magnetic layer. The second non-magnetic layer has an amorphous structure and contains a metal oxide or a metal nitride.