The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Feb. 23, 2023
Tianjin Sanan Optoelectronics Co., Ltd., Tianjin, CN;
Si Zhang, Tianjin, CN;
Shuili Yu, Tianjin, CN;
Chenming Wu, Tianjin, CN;
Kunte Lin, Tianjin, CN;
Huan-Shao Kuo, Tianjin, CN;
Jiansheng Qiu, Fujian, CN;
TIANJIN SANAN OPTOELECTRONICS CO., LTD., Tianjin, CN;
Abstract
A light-emitting device includes a semiconductor structure, a through hole, an electrical connecting structure, and a first electrode metal layer. The semiconductor structure has a first surface and a second surface, and includes a first-type semiconductor layer, a second-type semiconductor layer, and an active layer. The first surface is located on the first-type semiconductor layer, and the second surface is located on the second-type semiconductor layer. The through hole passes through the first-type semiconductor layer, the second-type semiconductor layer, and the active layer. The through hole has a first section, and the first-type semiconductor layer is exposed through the first section to electrically connect with the electrical connecting structure. A first angle between a side wall of the first type semiconductor layer that bounds the first section and the plane of the first surface ranges from 0° to 90°.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile