The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

Oct. 12, 2022
Applicant:

Lumileds Singapore Pte. Ltd., Singapore, SG;

Inventors:

Antonio Lopez Julia, Vaals, NL;

Nicola Bettina Pfeffer, Eindhoven, NL;

Oleg Borisovich Shchekin, San Francisco, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/814 (2025.01); H10H 20/857 (2025.01); H10H 29/14 (2025.01);
U.S. Cl.
CPC ...
H10H 20/814 (2025.01); H10H 20/857 (2025.01); H10H 29/142 (2025.01);
Abstract

A structure and method of micro-LEDs are described. The micro-LEDs have a GaN semiconductor structure containing a multi-quantum well active region configured to emit light of a visible wavelength range and a multilayer reflector structure that includes a distributed Bragg reflector (DBR) with a maximum reflectance at the visible wavelength range and to reflect the light emitted by the active region towards an emission surface of the semiconductor structure. The multilayer reflector structure also has a protective layer between the DBR and the GaN structure that is transparent to light of visible wavelengths. The multilayer reflector structure also has an absorbing metal layer that absorbs the light of visible wavelengths. A conductive material provides electrically contact to the semiconductor structure.


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