The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Nov. 22, 2023
Applicant:
Sony Group Corporation, Tokyo, JP;
Inventor:
Hideaki Togashi, Kanagawa, JP;
Assignee:
Sony Group Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/48 (2006.01); H04N 25/77 (2023.01); H04N 25/78 (2023.01); H04N 25/79 (2023.01); H10F 39/00 (2025.01); H10F 39/12 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/811 (2025.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H04N 25/77 (2023.01); H04N 25/78 (2023.01); H04N 25/79 (2023.01); H10F 39/18 (2025.01); H10F 39/1825 (2025.01); H10F 39/199 (2025.01); H01L 21/7682 (2013.01); H01L 2924/0002 (2013.01);
Abstract
There is provided a solid-state imaging device including: one or more photoelectric conversion elements provided on side of a first surface of a semiconductor substrate; a through electrode coupled to the one or more photoelectric conversion elements, and provided between the first surface and a second surface of the semiconductor substrate; and an amplifier transistor and a floating diffusion provided on the second surface of the semiconductor substrate, in which the one or more photoelectric conversion elements are coupled to a gate of the amplifier transistor and the floating diffusion via the through electrode.