The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Nov. 25, 2021
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;
Abstract
A solid-state imaging element according to an aspect of the present disclosure includes a first semiconductor substrate (), an insulating layer () and a second semiconductor substrate (), a floating diffusion layer (FD) of the first semiconductor substrate (), a transfer gate (TG) of the first semiconductor substrate (), a first through wire () electrically connected to the floating diffusion layer (FD) and penetrating the insulating layer () and the second semiconductor substrate (), a second through wire () electrically connected to the transfer gate (TG) and penetrating the insulating layer () and the second semiconductor substrate (), a wiring layer () stacked on the second semiconductor substrate () and having a wiring electrically connected to the first through wire () or the second through wire (), and an adjustment layer that is provided on the second semiconductor substrate () so as to be in contact with both or one of the first through wire () and the second through wire () and adjusts a capacitance between the transfer gate (TG) and the floating diffusion layer (FD).