The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Feb. 07, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Eunsub Shim, Suwon-si, KR;
Younggu Jin, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
An image sensor is provided. The image sensor includes: a semiconductor substrate including a photoelectric conversion region; a buried transmission gate electrode provided in a transmission gate trench; a fin-type active region provided between a first trench and a second trench which extend into the semiconductor substrate, wherein the fin-type active region includes a first source/drain region, a second source/drain region, and a channel region provided between the first and second source/drain regions; and a first gate electrode covering a top surface and both sidewalls of the fin-type active region, and inner walls of the first trench and the second trench. The channel region, the first source/drain region and the second source/drain region each have a first conductivity type. The photoelectric conversion region and the fin-type active region overlap along a vertical direction.