The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Sep. 22, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kyunghwan Lee, Suwon-si, KR;
Sungil Park, Suwon-si, KR;
Jae Hyun Park, Suwon-si, KR;
Daewon Ha, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A three-dimensional semiconductor device comprises a first active region on a substrate and including a lower channel pattern and a lower source/drain pattern connected to the lower channel pattern, a second active region stacked on the first active region and including an upper channel pattern and an upper source/drain pattern connected to the upper channel pattern, a gate electrode on the lower channel pattern and the upper channel pattern, a first active contact electrically connected to the lower source/drain pattern, an upper separation structure between the first active contact and the upper source/drain pattern, a second active contact electrically connected to the upper source/drain pattern, and a lower separation structure between the second active contact and the lower source/drain pattern.