The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Sep. 24, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
Kotaro Kawahara, Tokyo, JP;
Shiro Hino, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
A silicon carbide semiconductor device includes: a dummy sense region; and a drift layer of a first conductivity type, wherein a MOSFET with a built-in SBD including a first well region of a second conductivity type connected to a source electrode is formed in an active region, a MOSFET with a built-in SBD including a second well region of a second conductivity type connected to a sense pad is formed in an active sense region, and a third well region of a second conductivity type which is not ohmic-connected to any of the source electrode and the sense pad is formed on an upper layer part of the n-type drift layer in the dummy sense region. A gate electrode of the MOSFET with the built-in SBD in the active region and the MOSFET with the built-in SBD in the active sense region is connected to a gate pad.