The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

Oct. 18, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Young-Joo Jeon, Seoul, KR;

Byung Joo Go, Hwaseong-si, KR;

Hee-Sung Kam, Anyang-si, KR;

Su Jin Park, Gwangmyeong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/23 (2025.01); G11C 16/04 (2006.01); G11C 16/16 (2006.01); G11C 16/26 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 41/10 (2023.01); H10B 41/35 (2023.01); H10B 41/41 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10D 64/258 (2025.01); G11C 16/0483 (2013.01); G11C 16/16 (2013.01); G11C 16/26 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H10B 41/10 (2023.02); H10B 41/35 (2023.02); H10B 41/41 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02);
Abstract

A semiconductor device includes: a substrate includes an active area; a gate structure intersecting the active area; a source/drain area disposed on the active area; a lower contact disposed on the source/drain area or the gate structure; an upper contact disposed on the lower contact; and a plurality of conductive lines disposed on the upper contact, wherein the plurality of conductive lines extend in a first direction parallel to an upper surface of the substrate, wherein the plurality of conductive lines includes a first conductive line disposed on the upper contact, wherein a size in the first direction of the lower contact is smaller than a size in the first direction of the upper contact, wherein a size in a second direction of the lower contact is greater than a size in the second direction of the upper contact, wherein the second direction intersects the first direction.


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