The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Mar. 08, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chia-Chien Kuang, Hsinchu, TW;
Wei-Lun Chen, Taipei, TW;
Tze-Chung Lin, Hsinchu, TW;
Li-Te Lin, Hsinchu, TW;
Taiwan Semiconducor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure describes a semiconductor device with substantially uniform gate regions and a method for forming the same. The method includes forming a fin structure on a substrate, the fin structure including one or more nanostructures. The method further includes removing a portion of the fin structure to expose an end of the one or more nanostructures and etching the end of the one or more nanostructures with one or more etching cycles. Each etching cycle includes purging the fin structure with hydrogen fluoride (HF), etching the end of the one or more nanostructures with a gas mixture of fluorine (F) and HF, and removing an exhaust gas mixture including an etching byproduct. The method further includes forming an inner spacer in the etched end of the one or more nanostructures.