The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Jun. 10, 2022
Applicants:
Imec Vzw, Leuven, BE;
Universiteit Gent, Ghent, BE;
Inventor:
Benoit Bakeroot, Ghent, BE;
Assignee:
Imec VZW, Leuven, BE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); H10D 30/01 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/475 (2025.01); H10D 30/015 (2025.01); H10D 62/8503 (2025.01);
Abstract
A III-V device and a method for forming the device is provided. The III-V FET device includes: a device layer stack including in a bottom-up direction: a drain layer of n-type GaN, a drift layer of n-type GaN, a channel layer of p-type GaN, and a source layer; a gate extending in a top-down direction into the device layer stack and through the channel layer; and a source contact in contact with the source layer and a drain contact in contact with the drain layer; wherein the source layer is formed by a heterostructure comprising in the bottom-up direction a buffer layer of unintentionally doped GaN and a barrier layer of AlGaN.