The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

Nov. 22, 2021
Applicant:

Hitachi Energy Ltd, Zürich, CH;

Inventors:

Jan Vobecky, Prague, CZ;

Umamaheswara Vemulapati, Windisch, CH;

Assignee:

HITACHI ENERGY LTD, Zürich, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 18/00 (2025.01); H10D 18/80 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 18/80 (2025.01); H10D 18/221 (2025.01); H10D 62/126 (2025.01);
Abstract

A bidirectional thyristor device () comprising a semiconductor body () extending between a first main surface () and a second main surface (), is provided wherein a first main electrode () and a first gate electrode () are arranged on the first main surface and a second main electrode () and a second gate electrode () are arranged on the second main surface. The first main electrode comprises a plurality of first segments () that are spaced apart from one another, wherein at least some of the first segments are completely surrounded by the first gate electrode in a view onto the first main surface. The second main electrode comprises a plurality of second segments () that are spaced apart from one another, wherein at least some of the second segments are completely surrounded by the second gate electrode in a view onto the second main surface.


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Vobecky, Jan. (2025). Bidirectional thyristor device (U.S. Patent No. 12513928). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12513928

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