The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Dec. 28, 2022
Hyundai Mobis Co., Ltd., Seoul, KR;
Seon Hyeong Jo, Yongin-si, KR;
Hyuk Woo, Yongin-si, KR;
Tae Young Park, Yongin-si, KR;
Ju Hwan Lee, Yongin-si, KR;
Min Gi Kang, Yongin-si, KR;
Seong Hwan Yun, Yongin-si, KR;
Tae Yang Kim, Yongin-si, KR;
Hyundai Mobis Co., Ltd., Seoul, KR;
Abstract
Disclosed is a power semiconductor device that includes a gate electrode recessed from a first surface of a semiconductor substrate to a second surface, disposed opposite to the first surface, of the semiconductor substrate, an emitter region, including impurities in a first conductive type, disposed in contact with a trench, in which the gate electrode is disposed, and the first surface, a collector region, including impurities in a second conductive type opposite to the first conductive type, disposed in contact with the second surface, a floating region, including the impurities in the second conductive type, extending toward the second surface in an extension direction of the trench while surrounding a bottom surface of the trench, and a trench emitter region interposed under the gate electrode in the trench.