The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

Feb. 03, 2022
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Ryohei Gejo, Kawasaki, JP;

Tatsunori Sakano, Shinagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 12/00 (2025.01); H01L 23/528 (2006.01); H10D 62/10 (2025.01); H10D 64/23 (2025.01);
U.S. Cl.
CPC ...
H10D 12/481 (2025.01); H01L 23/528 (2013.01); H10D 12/441 (2025.01); H10D 62/127 (2025.01); H10D 64/232 (2025.01);
Abstract

According to one embodiment, a semiconductor device includes first to third electrodes, a first wiring member, a semiconductor member, and an insulating member. The first wiring member includes a first extending portion. A part of the third electrode is between the first electrode and the first extending portion. An other part of the third electrode is between the first and second electrodes. The semiconductor member is provided between the first and second electrodes and between the first electrode and the first extending portion. The semiconductor member includes first to sixth semiconductor regions. The first semiconductor region includes first and second partial regions. The first partial region is located between the first electrode and the third electrode. The insulating member includes the first insulating region. The first insulating region is provided between the third electrode and the semiconductor member.


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