The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

Dec. 10, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Tomotaka Ariga, Yokkaichi, JP;

Masayuki Kitamura, Yokkaichi, JP;

Hiroshi Toyoda, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10D 64/01 (2025.01); H10D 64/66 (2025.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10D 64/037 (2025.01); H10D 64/665 (2025.01);
Abstract

A semiconductor device that can have an improved data retention characteristic is provided. A semiconductor device includes a stacked body and a memory pillar formed in a memory hole of the stacked body. The memory pillar has a structure in which a semiconductor portion, a tunnel insulating film, and a charge storage layerare sequentially stacked. A block insulating filmis provided between the charge storage layerand a conductive layer. The conductive layercontains molybdenum. The block insulating filmincludes a silicon oxide filmand an aluminum oxide film. A region from the conductive layerto the aluminum oxide filmcontains chlorine, which prevents OH diffusion. The concentration of chlorine at a second portion closer to the aluminum oxide filmthan a first portion in the conductive layeris higher than the concentration of impurities at the first portion in the conductive layer.


Find Patent Forward Citations

Loading…