The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Jun. 20, 2022
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Seung Hwan Kim, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02); H10B 12/03 (2023.02); H10B 12/05 (2023.02); H10B 12/482 (2023.02);
Abstract
A method for fabricating a semiconductor device includes: forming a stack body by alternately stacking a plurality of semiconductor layers and a plurality of sacrificial semiconductor layers over a lower structure; forming an opening by etching the stack body; forming a plurality of active layers and a plurality of lateral recesses by etching the semiconductor layers and the sacrificial semiconductor layers through the opening; forming sacrificial dielectric layers partially filling the lateral recesses and contacting the active layers; and replacing the sacrificial dielectric layers with word lines.