The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Jun. 15, 2023
Imec Vzw, Leuven, BE;
Katholieke Universiteit Leuven, Leuven, BE;
Hsiao-Hsuan Liu, Leuven, BE;
Shairfe Muhammad Salahuddin, Kessel-Lo, BE;
Boon Teik Chan, Wilsele, BE;
Imec VZW, Leuven, BE;
Abstract
A bit cell for a Static Random-Access Memory (SRAM) is provided that includes a first and second pair of complementary transistors as well as a first pass-gate transistor and a second pass-gate transistor. A first inverter gate electrode forms a common gate electrode for the first pair of complementary transistors and a second inverter gate electrode forms a common gate electrode for the second pair of complementary transistors. Further, a first pass gate electrode forms a gate of the first pass-gate transistor and a second pass gate electrode forms a gate of the second pass-gate transistor. A first and a second dielectric wall are also provided, separating the first pass gate electrode from the first inverter gate electrode, and the second pass gate electrode from the second inverter gate electrode.