The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Feb. 26, 2024
Sharp Kabushiki Kaisha, Sakai, JP;
Takeshi Shiomi, Sakai, JP;
SHARP KABUSHIKI KAISHA, Sakai, JP;
Abstract
A half-bridge circuit includes a series of a first high-voltage MOS, a first low-voltage MOS, a second high-voltage MOS, and a second low-voltage MOS. The half-bridge circuit further includes a capacitor, and the capacitor is connected to the first high-voltage MOS and the second low-voltage MOS. The voltage of the capacitor is greater than 300 V. The drain-to-source withstanding voltage of the first high-voltage MOS is higher than the drain-to-source withstanding voltage of the first low-voltage MOS by 10 times or greater. The voltage of the capacitor is higher than the drain-to-source withstanding voltage of the first low-voltage MOS by 10 times or greater.