The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

Jan. 19, 2023
Applicants:

Shaoxing Yuanfang Semiconductor Co., Ltd., Shaoxing, CN;

Spirit Semiconductor Limited, Reading, GB;

Inventors:

Nigesh Baladhandapani, Bangalore, IN;

Gopikrishna Reddy Gudibandla, Bangalore, IN;

Sandeep Mallya Perdoor, Bangalore, IN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/30 (2006.01); H03F 1/32 (2006.01); H03F 3/21 (2006.01); H04B 1/40 (2015.01); H04L 5/14 (2006.01);
U.S. Cl.
CPC ...
H03F 1/3205 (2013.01); H03F 3/21 (2013.01); H04B 1/40 (2013.01); H03F 2200/294 (2013.01); H03F 2200/451 (2013.01); H04L 5/14 (2013.01);
Abstract

A bias block for providing a bias voltage includes a transistor having a control terminal, a first current terminal and a second current terminal. A voltage level at the control terminal determines a magnitude of current flowing between the first current terminal and the second current terminal. The first current terminal is coupled to a supply voltage via a first impedance and the second current terminal is coupled to a constant reference potential via a second impedance. The second current terminal provides the bias voltage. The bias block further includes a capacitor coupled between the control terminal and the second current terminal of the transistor.


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