The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
May. 14, 2020
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Shinya Nishimura, Tokyo, JP;
Shuichi Hiza, Tokyo, JP;
Kunihiko Nishimura, Tokyo, JP;
Eiji Yagyu, Tokyo, JP;
Assignee:
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/32 (2006.01); H01S 5/02 (2006.01); H01S 5/323 (2006.01);
U.S. Cl.
CPC ...
H01S 5/32341 (2013.01); H01S 5/021 (2013.01); H01S 5/0217 (2013.01);
Abstract
A semiconductor device includes a first substrate, a semiconductor layer consisting of a nitride-based compound semiconductor, and a bonding layer bonded to the first substrate and the semiconductor layer between the first substrate and the semiconductor layer, and containing at least one of constituent elements of the nitride-based compound semiconductor.