The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Oct. 15, 2019
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Hiroyuki Kawahara, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/32 (2006.01); H01S 5/042 (2006.01); H01S 5/227 (2006.01); H01S 5/323 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3219 (2013.01); H01S 5/04256 (2019.08); H01S 5/227 (2013.01); H01S 5/32308 (2013.01); H01S 2304/04 (2013.01);
Abstract
A semiconductor device according to the present application includes a semiconductor substrate, an n-type first cladding layer provided on the semiconductor substrate, an n-type second cladding layer provided on the first cladding layer, an active layer provided on the second cladding layer, a p-type third cladding layer provided on the active layer, a surface electrode provided above the third cladding layer, a back surface electrode provided below the semiconductor substrate and a p-type diffusion prevention layer provided between the first cladding layer and the second cladding layer.