The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

Aug. 29, 2022
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Naoko Konishi, Osaka, JP;

Takehiko Kikuchi, Osaka, JP;

Hideki Yagi, Osaka, JP;

Nobuhiko Nishiyama, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/04 (2006.01); H01S 5/02 (2006.01); H01S 5/024 (2006.01); H01S 5/042 (2006.01); H01S 5/10 (2021.01); H01S 5/22 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/1032 (2013.01); H01S 5/0207 (2013.01); H01S 5/021 (2013.01); H01S 5/0215 (2013.01); H01S 5/02461 (2013.01); H01S 5/02476 (2013.01); H01S 5/04254 (2019.08); H01S 5/22 (2013.01); H01S 5/02469 (2013.01); H01S 5/3434 (2013.01); H01S 5/34373 (2013.01); H01S 2301/176 (2013.01);
Abstract

A semiconductor optical device includes a substrate having an optical waveguide, a gain section formed of a compound semiconductor having an optical gain and bonded to an upper surface of the substrate, the gain section having a first mesa, and a first wiring line electrically connected to the gain section. The first mesa of the gain section is optically coupled to the optical waveguide. The substrate includes a first layer, a second layer, and a third layer. The first layer has a higher thermal conductivity than the second layer. The second layer is stacked on the first layer. The third layer is stacked on the second layer. A recess provided in the substrate extends through the third layer to the second layer in the thickness direction. The first wiring line extends from the first mesa of the gain section to the recess.


Find Patent Forward Citations

Konishi, Naoko. (2025). Semiconductor optical device and method of manufacturing the same (U.S. Patent No. 12512645). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12512645

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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