The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

Jun. 28, 2022
Applicants:

Rohm and Haas Electronic Materials Llc, Marlborough, MA (US);

Ddp Specialty Products Taiwan Co., Ltd., Taipei, TW;

Inventors:

Mitsuru Haga, Niigata, JP;

Ching-Lung Chen, Miaoli, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/11 (2013.01); G03F 7/20 (2013.01); G03F 7/30 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11622 (2013.01);
Abstract

Disclosed herein is a metallization method, comprising (a) forming on a first surface of a substrate an underlayer from an underlayer composition comprising: a first polymer comprising an acid-labile group, and a sensitizing group, wherein (i) the first polymer comprises the sensitizing group or (ii) a compound that is distinct from the first polymer comprises the sensitizing group; wherein the underlayer has a first thickness; (b) forming on the underlayer a photoresist layer from a photoresist composition comprising: a second polymer comprising an acid-labile group, and a photoacid generator; wherein the photoresist layer has a second thickness; (c) pattern-wise exposing the photoresist layer to activating radiation; (d) developing the exposed photoresist layer with a basic developer.


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