The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

Dec. 20, 2022
Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Waikin Li, Leuven, BE;

Zheng Tao, Heverlee, BE;

Min-Soo Kim, Kessel-Lo, BE;

Assignee:

Imec vzw, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 21/66 (2006.01); H10D 30/43 (2025.01); H10D 30/63 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); H01L 22/20 (2013.01); H10D 30/43 (2025.01); H10D 30/63 (2025.01); H10D 30/6735 (2025.01); H10D 62/119 (2025.01);
Abstract

A semiconductor structure includes a device area that includes a first structure in a first layer having a top surface above a top surface of the first layer, and a second structure in a second layer on top of the first layer, where the first structure is pinned in the second structure; an overlay metrology area for optically evaluating an overlay error between the second and first structure, including: a third structure in the first layer, having a top surface above the top surface of the first layer, a fourth structure in the second layer, where the combination of the third and fourth structures mimics the combination of the first structure and the second structures, and a fifth structure in the first layer, for use as a reference structure.


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