The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Aug. 16, 2022
Texas Instruments Incorporated, Dallas, TX (US);
William Harrison, Apex, NC (US);
Sylvester Ankamah-Kusi, Dallas, TX (US);
Yiqi Tang, Allen, TX (US);
Rajen M. Murugan, Dallas, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
A semiconductor device is described herein. The semiconductor device generally includes a metal fabrication layer disposed on a substrate. The semiconductor device generally includes a dielectric layer having a first plurality of vias aligned with a first metallization region of the metal fabrication layer and a second plurality of vias aligned with a second metallization region of the metal fabrication layer, the dielectric layer disposed on top of the metal fabrication layer. The semiconductor device generally includes a metal layer disposed on the dielectric layer and having a plurality of metal routings, each of the metal regions disposed over both the first metallization region and the second metallization region, each of the plurality of metal routings have a same width. The semiconductor device generally includes an insulation layer disposed on the metal layer, the insulation layer having a plurality of openings to the metal routings of the metal layer.