The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Oct. 03, 2022
Applicant:
Tes Co., Ltd, Yongin-si, KR;
Inventors:
Bong-Soo Kwon, Yongin-si, KR;
Se-Chan Kim, Yongin-si, KR;
Assignee:
TES CO., LTD, Yongin-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01);
Abstract
A method of processing a substrate on which films comprising a first silicon oxide film, a silicon nitride film and a second silicon oxide film are stacked from an outermost side, includes: a first etching step of etching the first silicon oxide film; and a second etching step of etching the silicon nitride film and the second silicon oxide film. In the first etching step, a residual layer of the first silicon oxide film is left. In the second etching step, the residual layer of the first silicon oxide film, the silicon nitride film and the second silicon oxide film are etched together.