The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Aug. 07, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jongryul Kim, Suwon-si, KR;
Yongsung Cho, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A flash memory device including a cell string including memory cells, a page buffer connected to the cell string and a bit line and configured to sense data stored in a selected memory cell by pre-charging a sensing node connected to the bit line, the page buffer including a latch including a latch node and an inverted latch node, a sampling switch circuit configured to perform a trip voltage sampling operation by electrically connecting the latch node and the sensing node according to a sampling control signal, and a pull-down NMOS transistor configured to define a trip voltage provided to the latch node based on a sensing result of the data stored in the selected memory cell, and a voltage regulator configured to adjust the trip voltage by providing a source voltage to the pull-down NMOS transistor of the page buffer, may be provided.