The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

Jun. 23, 2023
Applicants:

SK Hynix Inc., Icheon, KR;

Seoul National University R&db Foundation, Seoul, KR;

Inventor:

Sung Ho Park, Seoul, KR;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/14 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01);
Abstract

A flash memory device includes a control circuit and a cell array including a first memory string including a plurality of first flash memory cells having control gates connected to a plurality of word lines, respectively, and a first bit line selection switch connecting the plurality of first flash memory cells to a first bit line in response to a voltage of a first drain selection line. The control circuit controls a first operation to program a selected flash memory cell with data so that a threshold voltage of the selected flash memory cell becomes greater than a first target threshold voltage and a second operation to erase the selected flash memory cell so that the threshold voltage becomes equal to or smaller than a target threshold voltage, the first target threshold voltage being greater than the target threshold voltage that is set according to the data.


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