The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Oct. 09, 2023
Sandisk Technologies, Inc., Milpitas, CA (US);
Yuki Kuniyoshi, Fujisawa, JP;
Hardwell Chibvongodze, Hiratsuka, JP;
Alvin Joshua, Fujisawa, JP;
Akira Hanasaka, Fujisawa, JP;
Akitomo Nakayama, Yokohama, JP;
Sandisk Technologies, Inc., Milpitas, CA (US);
Abstract
Technology is for managing non-volatile memory such as NAND memory. A memory system that programs the threshold voltages (Vt) of transistors on NAND strings to enable selection of sub-blocks without physically separate select lines in a block. A first set of one or more transistors on a NAND string may be programmed to a higher Vt and a second set of one or more transistors on the NAND string may be programmed to a lower Vt. Each NAND string in a sub-block may have the same pattern of high Vt and low Vt transistors. However, each sub-block has its own pattern of high Vt and low Vt transistors to enable selection of the sub-blocks. To select NAND strings in a sub-block, a high voltage is applied to a first set of the conductive lines and a low voltage is applied to a second set of the conductive lines.