The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Jan. 04, 2023
Lapis Technology Co., Ltd., Yokohama, JP;
Hiroyuki Tanikawa, Yokohama, JP;
LAPIS Technology Co., Ltd., Yokohama, JP;
Abstract
In a semiconductor device, at least one of a first transistor and a second transistor that supply a second voltage in a step-down circuit stepping down a first voltage to the second voltage and outputting the second voltage from an output portion is configured such that the number of second contacts of a source electrode which is connected to a ground voltage or is supplied with the first voltage is larger than the number of first contacts connecting a diffusion layer and a first metal layer of a drain electrode connected to the output portion, and the number of second vias of the source electrode connected to the ground voltage or supplied with the first voltage is larger than the number of first vias connecting the first metal layer and a second metal layer of the drain electrode connected to the output portion.