The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2025

Filed:

Apr. 15, 2024
Applicant:

Seoul National University R&db Foundation, Seoul, KR;

Inventors:

Jae-Joon Kim, Seoul, KR;

Munhyeon Kim, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 5/06 (2006.01); G11C 11/419 (2006.01); H10B 10/00 (2023.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); G11C 5/063 (2013.01); H10B 10/125 (2023.02); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01);
Abstract

A random access memory includes a first transistor including a first gate extending in a first direction, a second transistor disposed on a same plane as the first transistor and including a second gate extending in the first direction, a third transistor including a third gate extending in a second direction perpendicular to the first direction and formed on the first transistor, a fourth transistor including a fourth gate extending in the second direction and formed on the second transistor, a first storage node connecting the first gate of the first transistor to a drain of the third transistor and storing data, and a second storage node connecting the second gate of the second transistor to a drain of the fourth transistor and storing data.


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