The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2025
Filed:
Sep. 01, 2023
Kioxia Corporation, Tokyo, JP;
Kunifumi Suzuki, Yokkaichi Mie, JP;
Yuuichi Kamimuta, Nagoya Aichi, JP;
KIOXIA CORPORATION, Tokyo, JP;
Abstract
A memory cell includes: a core structure extending in a first direction orthogonal to a semiconductor substrate; a semiconductor layer extending in the first direction and in contact with the core structure; an insulating layer extending in the first direction and in contact with the semiconductor layer; a ferroelectric layer extending in the first direction and in contact with the insulating layer; a first electrode extending in a second direction orthogonal to the first direction and in contact with the ferroelectric layer; a second electrode adjacent to the first electrode in the first direction, extending in the second direction, and in contact with the ferroelectric layer; an insulating layer stacked in the first direction and disposed between the first and second electrodes; and an antiferroelectric layer disposed between the first and second electrodes, and in contact with the insulating layer and the ferroelectric layer.